Multiplicative topological descriptors of Silicon carbide
- Autores: Abaidur Rehman Virk, Tanveer Abbas, Wasim Khalid
- Localización: Applied Mathematics and Nonlinear Sciences, ISSN-e 2444-8656, Vol. 4, Nº. 1, 2019, págs. 193-202
- Idioma: inglés
- DOI: 10.2478/amns.2019.1.00018
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Resumen
Topological indices helps us to collect information about algebraic graphs and gives us mathematical approach to understand the properties of chemical structures. In this paper, we aim to compute multiplicative degree-based topological indices of Silicon-Carbon Si2C3−III[p,q] and SiC3−III[p,q] .
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