Hysteretic linear conductance in single electron transport through a single atom magnet

• Autores: J. Fernández Rossie, Roque Aguado Merlo
• Localización: Progress in industrial mathematics at ECMI 2006 / Luis Bonilla (aut.), 2008, ISBN 978-3-540-71991-5, págs. 460-465
• Idioma: español
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• Resumen

  • We consider single electron transport through a II-VI semiconductor quantum dot doped with a single Mn atom. The spin dynamics of the Mn atom is controlled by the carriers electrically injected in the dot. We find that the charge-vs.-gate curve can display hysteretic behaviour when the Mn-carrier interaction is anisotropic. We discuss the origin and implication of this result.