DETERMINISTIC PARTICLE SIMULATION OF MULTIHETEROJUNCTION SEMICONDUCTOR DEVICES: THE SEMICLASSICAL AND QUANTUM CASES
ISSN: 0332-1649
Article publication date: 1 April 1994
Abstract
The progress of semiconductor fabrication technology, particularly the heteroepitaxial technology (MOCVD, MBE, etc.) has permitted the fabrication of structures and devices whose behaviour is dominated by ballistic and/or quantum‐interference effects through heterojunctions.
Citation
Cebrián, E. and Mustieles, F.J. (1994), "DETERMINISTIC PARTICLE SIMULATION OF MULTIHETEROJUNCTION SEMICONDUCTOR DEVICES: THE SEMICLASSICAL AND QUANTUM CASES", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 13 No. 4, pp. 717-725. https://doi.org/10.1108/eb051889
Publisher
:MCB UP Ltd
Copyright © 1994, MCB UP Limited