Deterministic particle simulation of multiheterojunction semiconductor devices:: the semiclassical and quantum cases

E. Cebrián ^[1] ; F.J. Mustieles ^[1]
1. [1] Telefónica, Investigatión y Desarrollo, España
Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 13, Nº 4, 1994, págs. 717-725
Idioma: inglés
DOI: 10.1108/eb051889
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Resumen
- The progress of semiconductor fabrication technology, particularly the heteroepitaxial technology (MOCVD, MBE, etc.) has permitted the fabrication of structures and devices whose behaviour is dominated by ballistic and/or quantum‐interference effects through heterojunctions.